New IBM and Samsung transistors could be key to sub-1nm chips

IBM and Samsung claim they've made a breakthrough in semiconductor design. On day one of the IEDM conference in San Francisco, the two companies unveiled a new design for stacking transistors vertically on a chip. With current processors and SoCs, transistors lie flat on the surface of the silicon, and then electric current flows from side-to-side. By contrast, Vertical Transport Field Effect Transistors (VTFET) sit perpendicular to one another and current flows vertically. According to IBM and ...